052-6336 rev d 5- 2011 absolute maximum ratings symbol parameter ratings unit v ces collector emitter voltage 600 v i c1 continuous collector current @ t c = 25c 65 a i c2 continuous collector current @ t c = 100c 36 i cm pulsed collector current 1 109 v ge gate-emitter voltage 2 30 v p d total power dissipation @ t c = 25c 290 w ssoa switching safe operating area @ t j = 150c 109a @ 600v t j , t stg operating and storage junction temperature range -55 to 150 c t l lead temperature for soldering: 0.063" from case for 10 seconds 300 combi (igbt and diode) typical applications zvs phase shifted and other full bridge half bridge high power pfc boost welding ups, solar, and other inverters high frequency, high ef? ciency industrial features fast switching with low emi very low e off for maximum ef? ciency ultra low c res for improved noise immunity low conduction loss low gate charge increased intrinsic gate resistance for low emi rohs compliant APT36GA60BD15 apt36ga60sd15 600v APT36GA60BD15 power mos 8 ? is a high speed punch-through switch-mode igbt. low e off is achieved through leading technology silicon design and lifetime control processes. a reduced e off - v ce(on) tradeoff results in superior ef ? ciency compared to other igbt technologies. low gate charge and a greatly reduced ratio of c res /c ies provide excel- lent noise immunity, short delay times and simple gate drive. the intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low emi, even when switching at high frequency. microsemi website - http://www.microsemi.com high speed pt igbt static characteristics t j = 25c unless otherwise speci? ed symbol parameter test conditions min typ max unit v br(ces) collector-emitter breakdown voltage v ge = 0v, i c = 1.0ma 600 v v ce(on) collector-emitter on voltage v ge = 1 5 v, i c = 20a t j = 25c 2.0 2.5 t j = 125c 1.9 v ge(th) gate emitter threshold voltage v ge =v ce , i c = 1ma 3 4.5 6 i ces zero gate voltage collector current v ce = 600v, v ge = 0v t j = 25c 275 a t j = 125c 3000 i ges gate-emitter leakage current v gs = 30v 100 na to-247 d 3 pak apt36ga60sd15 downloaded from: http:///
052-6336 rev d 5 - 2011 thermal and mechanical characteristics dynamic characteristics t j = 25c unless otherwise speci? ed apt36ga60b_sd15 symbol characteristic min typ max unit r jc junction to case thermal resistance (igbt) - - .43 c/w r jc junction to case thermal resistance (diode) 1.35 w t package weight - 5.9 - g torque mounting torque (to-247 package), 4-40 or m3 screw 10 inlbf symbol parameter test conditions min typ max unit c ies input capacitance capacitance v ge = 0v, v ce = 25v f = 1mhz 2880 pf c oes output capacitance 226 c res reverse transfer capacitance 328 q g total gate charge 3 gate charge v ge = 15v v ce = 300v i c = 20a 102 q ge gate-emitter charge 18 nc q gc gate- collector charge 36 ssoa switching safe operating area t j = 150c, r g = 10 4 , v ge = 15v, l= 100uh, v ce = 600v 109 a t d(on) turn-on delay time inductive switching (25c) v cc = 400v v ge = 15v i c = 20a r g = 10 4 t j = +25c 16 ns t r current rise time 14 t d(off) turn-off delay time 122 t f current fall time 77 e on2 turn-on switching energy 307 j e off turn-off switching energy 6 254 t d(on) turn-on delay time inductive switching (125c) v cc = 400v v ge = 15v i c = 20a r g = 10 4 t j = +125c 14 ns t r current rise time 15 t d(off) turn-off delay time 149 t f current fall time 113 e on2 turn-on switching energy 508 j e off turn-off switching energy 6 439 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 2 pulse test: pulse width < 380 s , duty cycle < 2%. 3 see mil-std-750 method 3471.4 r g is external gate resistance, not including internal gate resistance or gate driver impedance. (mic4452) 5 e on2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the igbt turn on energy loss. a combi device is used for the clamping diode.6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. microsemi reserves the right to change, without notice, the speci? cations and information contained herein. downloaded from: http:///
052-6336 rev d 5- 2011 typical performance curves apt36ga60bd_s15 0 10 20 30 40 50 60 70 80 25 50 75 100 125 150 0 1 2 3 4 5 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 0 10 20 30 40 50 60 70 80 90 100 0 1 2 3 4 6 8 10 12 14 16 0 50 100 150 200 250 300 0 2 4 6 8 10 12 14 0 40 80 120 160 200 240 280 0 4 8 12 16 20 24 28 32 0 10 20 30 40 50 60 0 1 2 3 4 5 6 250 s pulse test<0.5 % duty cycle t j = 25c. 250 s pulse test <0.5 % duty cycle v ge = 15v. 250 s pulse test <0.5 % duty cycle i c = 10a i c = 20a i c = 40a i c = 20a i c = 40a 13v 6v 15v i c = 20a t j = 25c v ce = 480v v ce = 300v v ce = 120v t j = 25c t j = -55c v ge = 15v t j = 55c t j = 150c v ce , collector-to-emitter voltage (v) figure 1, output characteristics (t j = 25c) i c , collector current (a) t j = 25c t j = 125c v ce , collector-to-emitter voltage (v) figure 2, output characteristics (t j = 25c) i c , collector current (a) t j = 125c v ge , gate-to-emitter voltage (v) figure 3, transfer characteristics i c , collector current (a) v ge , gate-to-emitter voltage (v) figure 5, on state voltage vs gate-to-emitter voltage v ce , collector-to-emitter voltage (v) gate charge (nc) figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 6, on state voltage vs junction temperature v ce , collector-to-emitter voltage (v) t c , case temperature (c) figure 8, dc collector current vs case temperature i c , dc collector current (a) -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 t j , junction temperature figure 7, threshold voltage vs junction temperature v gs(th) , threshold voltage (normalized) 8v 9v 10v i c = 10a 11v 12v downloaded from: http:///
052-6336 rev d 5 - 2011 0 200 400 600 800 1000 1200 1400 1600 0 25 50 75 100 125 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 10 20 30 40 50 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 35 40 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 35 40 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 0 40 80 120 160 200 0 5 10 15 20 25 30 35 40 10 12 14 16 18 20 0 5 10 15 20 25 30 35 40 v ge =15v,t j =125c v ge =15v,t j =25c v ce = 400v r g = 10 l = 100 h v ce = 400v v ge = +15v r g =10 v ce = 400v t j = 25c , or 125c r g = 10 l = 100 h v ge = 15v v ce = 400v v ge = +15v r g = 10 v ce = 400v v ge = +15v r g = 10 r g = 10 , l = 100 h, v ce = 400v t j = 125c t j = 25c t j = 125c t j = 25c r g = 10 , l = 100 h, v ce = 400v t j = 25 or 125c,v ge = 15v t j = 125c, v ge = 15v t j = 25c, v ge = 15v e on2, 40a e on2, 20a e off, 20a e on2, 10a e off, 10a v ce = 400v v ge = +15v t j = 125c e on2, 40a e on2, 20a e off, 40a e off, 20a e on2, 10a e off, 10a i ce , collector-to-emitter current (a) figure 9, turn-on delay time vs collector current t d(on) , turn-on delay time (ns) i ce , collector-to-emitter current (a) figure 10, turn-off delay time vs collector current t d(off) , turn-off delay time (ns) i ce , collector-to-emitter current (a) figure 11, current rise time vs collector current t r , rise time (ns) i ce , collector-to-emitter current (a) figure 12, current fall time vs collector current t r , fall time (ns) i ce , collector-to-emitter current (a) figure 13, turn-on energy loss vs collector current e on2 , turn on energy loss ( j) i ce , collector-to-emitter current (a) figure 14, turn-off energy loss vs collector current e off , turn off energy loss ( j) r g , gate resistance (ohms) figure 15, switching energy losses vs gate resistance switching energy losses ( j) t j , junction temperature (c) figure 16, switching energy losses vs junction temperature switching energy losses ( j) e off, 40a typical performance curves apt36ga60bd_s15 downloaded from: http:///
052-6336 rev d 5- 2011 typical performance curves apt36ga60b_sd15 0 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 10 -5 10 -4 10 -3 10 -2 10 1.0 -1 10 100 1000 10000 0 100 200 300 400 500 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 c oes c res c ies peak t j = p dm x z jc +t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: v ce , collector-to-emitter voltage (volts) figure 17, capacitance vs collector-to-emitter voltage c, capacitance (pf) 0.1 1 10 100 200 1 10 100 800 v ce , collector-to-emitter voltage figure 18, minimum switching safe operating area i c , collector current (a) downloaded from: http:///
052-6336 rev d 5 - 2011 apt36ga60bd_s15 figure 21, turn-on switching waveforms and de? nitions t j = 125c collector current collector voltage gate voltage 5% 10% t d(on) 90% 10% t r 5% switching energy figure 22, turn-off switching waveforms and de? nitions t j = 125c collector voltage collector current gate voltage switching energy 0 t d(off) 10% t f 90% i c a d.u.t. v ce v cc apt15dq60 figure 20, inductive switching test circuit downloaded from: http:///
052-6336 rev d 5- 2011 static electrical characteristics dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. ultrafast soft recovery rectifier diode symbol characteristic / test conditions apt36ga60b_sd15 unit i f(av) maximum average forward current (t c = 129c, duty cycle = 0.5) 15 amps i f(rms) rms forward current (square wave, 50% duty) 30 i fsm non-repetitive forward surge current (t j = 45c, 8.3 ms) 110 symbol characteristic / test conditions min type max unit v f forward voltage i f = 15a 2.0 volts i f = 30a 2.5 i f = 15a, t j = 125c 1.56 symbol characteristic test conditions min typ max unit t rr reverse recovery time i f = 1a, di f /dt = -100a/ s , v r = 30v, t j = 25 c - 15 - ns t rr reverse recovery time i f = 15a, di f /dt = -200a/ s v r = 400v, t c = 25 c - 19 - q rr reverse recovery charge - 21 - nc i rrm maximum reverse recovery current - 2 - amps t rr reverse recovery time i f = 15a, di f /dt = -200a/ s v r = 400v, t c = 125 c - 105 -n s q rr reverse recovery charge - 250 - nc i rrm maximum reverse recovery current - 5 - amps t rr reverse recovery time i f = 15a, di f /dt = -1000a/ s v r = 400v, t c = 125 c - 55 - ns q rr reverse recovery charge - 420 -n c i rrm maximum reverse recovery current - 15 - amps z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 23. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 1.401.20 1.00 0.80 0.60 0.40 0.20 0 0.5 single pulse 0.1 0.3 0.7 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: d = 0.9 downloaded from: http:///
052-6336 rev d 5 - 2011 dynamic characteristics t j = 25c unless otherwise speci? ed apt36ga60b_sd15 t j =125 c v r =400v 7.5a 15a 30a t j = -55 c t j = 25 c t j = 125 c t j = 175 c duty cycle = 0.5 t j =175 c 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200 3530 25 20 15 10 50 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) t j , junction temperature ( c) case temperature ( c) figure 28. dynamic parameters vs. junction temperature figure 29. maximum average forward current vs. casetemperature v r , reverse voltage (v) figure 30. junction capacitance vs. reverse voltage q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j =125 c v r =400v 30a 7.5a 15a 6050 40 30 20 10 0 700600 500 400 300 200 100 0 140120 100 8060 40 20 0 2520 15 10 50 v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 24. forward current vs. forward voltage figure 25. reverse recovery time vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 26. reverse recovery charge vs. current rate of change figure 27. reverse recovery current vs. current rate of change 0 1 2 3 4 0 200 400 600 800 1000 1200 1400 1600 0 200 400 600 800 1000 1200 1400 1600 0 200 400 600 800 1000 1200 1400 1600 t j =125 c v r =400v 30a 15a 7.5a q rr t rr t rr q rr i rrm 1.21.0 0.8 0.6 0.4 0.2 0.0 9080 70 60 50 40 30 20 10 0 downloaded from: http:///
052-6336 rev d 5- 2011 dynamic characteristics t j = 25c unless otherwise speci? ed apt36ga60b_sd15 4 3 1 2 5 zer o 0.25 i rr m pearson 2878 current transformer di f /dt adjus t 30h d.u.t. +18v 0v v r t rr / q rr waveform 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016) gate 5.45 (.215) bsc 2-plcs. 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc {2 plcs. } 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) and leadsare plated 3.81 (.150)4.06 (.160) (base of lead) (heat sink) 1.98 (.078)2.08 (.082) 0.020 (.001) 0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453)11.61 (.457) 13.41 (.528)13.51(.532) revised8/29/97 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) revised 4/18/95 gate collector (cathode) collector (cathode) emitter (anode) collector (cathode) collector (cathode) emitter (anode) heat sink (collector) figure 32. diode reverse recovery waveform de? nition figure 31. diode test circuit i f - forward conduction current di f /dt - rate of diode current change through zero crossing. i rrm - maximum reverse recovery current t rr - reverse recovery time measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through i rrm and 0.25, i rrm passes through zero. q rr - area under the curve de ? ned by i rrm and t rr. 5 1 2 3 4 e1 sac: tin, silver, copper e3 100% sn plated to-247 package outline dimensions in millimeters (inches) dimensions in millimeters (inches) d 3 pak package outline 1.016 (.040) downloaded from: http:///
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